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| 4v drive pch mosfet RQ1E050RP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package. 3) 4v drive. ? application switching ? inner circuit ? packaging specifications package code basic ordering unit (pieces) RQ1E050RP ? absolute maximum ratings (ta = 25 ? c) unit v v a a a a power dissipation w channel temperature ? c range of storage temperature ? c *1 pw ? 10 ? s, duty cycle ? 1% ? thermal resistance unit channel to ambient ? c / w *mounted on a ceramic board. ? 30 limits rth (ch-a) symbol 83.3 limits v dss symbol ? 55 ~ +150 150 1.5 ? 20 ? 1 ? 20 ? 5 ? 20 i s i dp i d v gss tstg tch p d i sp parameter source current (body diode) drain current parameter pulsed continuous pulsed continuous type gate-source voltage drain-source voltage 3000 tr taping (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode abbreviated symbol :ud tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) *1 * *2 *1 ?2 ?1 (8) (7) ( 1) (2) (6) (5) (3) ( 4) 1/5 2010.07 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RQ1E050RP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -2231 i d = ? 5a, v gs = ? 10v -3245 i d = ? 2.5a, v gs = ? 4.5v -3650 i d = ? 2.5a, v gs = ? 4.0v forward transfer admittance l y fs l 3.1 - - s i d = ? 5a, v ds = ? 10v input capacitance c iss - 1300 - pf v ds = ? 10v output capacitance c oss - 180 - pf v gs =0v reverse transfer capacitance c rss - 160 - pf f=1mhz turn-on delay time t d(on) - 10 - ns i d = ? 2.5a, v dd ? 15v rise time t r - 15 - ns v gs = ? 10v turn-off delay time t d(off) - 90 - ns r l 6.0 ? fall time t f - 50 - ns r g =10 ? total gate charge q g - 13 - nc i d = ? 5a, v dd ? 15v gate-source charge q gs - 3.5 - nc v gs = ? 5v r l 3 ? gate-drain charge q gd - 4.5 - nc r g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/5 2010.07- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved. RQ1E050RP ? electrical characteristic curves 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 v gs = -2.5v ta=25c pulsed v gs = -4.5v v gs = -4.0v v gs = -2.8v v gs = -3.0v v gs = -10v 0.001 0.01 0.1 1 10 0123 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 1 10 100 1000 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = -10v ta=25c pulsed 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 0246810 v gs = -2.5v ta=25c pulsed v gs = -3.0v v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -2.8v 1 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 1 10 100 1000 0.1 1 10 v gs = -10v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 0.01 0.1 1 10 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 1 10 100 1000 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-stat e resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] source current : - i s [a] source-drain voltage : -v sd [v] 3/5 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved. RQ1E050RP 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 ta=25c pulsed i d = -5.0a i d = -2.5a 0 2 4 6 8 10 0 4 8 12 16 20 24 28 ta=25c v dd = -15v i d = -5.0a r g =10? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 10000 0.01 0.1 1 10 t f t d(on) t d(off) ta=25c v dd = -15v v gs = -10v r g =10? pulsed t r fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf] 4/5 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved. RQ1E050RP ? measurement circuits fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2010.07- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved. www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice ] ?? ???w ??hx ? ???w?dsxz 8l~ ?b?\q?nxs ??`?b{ ???wgl o0x~?srwh?'sx!?b?\quk??b{ ???tgl^?om? o0x a ?w] op??pb{]?;tkh??`oxz m?7 {? ?c ] e{woqz ]? yxi^m{ ???tgl^?os??b ;s???fw :srw ?ctmv?`oxz? a ?w a j $s ?^??mm? ?b??wpb{ `hum?`oz?? ?-?^?? ?txz? ? ~ e??? `omhiv?b?os&mmh`?b{ ???tgl^?os??b ?cxz y??8bh? ? ot^ r`h?wpbuzauz p? ?cw ??~? ti?b? ?usl7t \ah ?tsmo?z ?xfw y ? ?o?wpxk??d?{ ???tgl^?os??bu [ ?cxz a ?w e $ ?^s?| ;s??sr??`h?wpk?z ??hx tw ? $r?vfw wk???vbtmmo? $t??? $t?z fw?a?hx b;?? zb??wpxk??d?{ gu [ ?cw?;ti?`o u c \`h ?z ?x fw y ? ?o?wpxk??d?{ ???t l^?os??b a ?xz ` $s ??;+ " 7;+z 0 ";+z ?;+zh ? a ?z ????y??;+sr?w?;?? $`om?b{ ???t l^?os??b a ?xz ? 1l ?-xs^?os??d?{ ?x t ?~ ?t qw2 t ? ?ps??buz ?wa?p? ?b?\q?k? ??b{ ? a ?u? ?`hmz fw1t?? ??zpb ? sui\?sm?o]?;;+pw ???a???z ? ? ?-z ?w-z ????? sw? ??-?s&m`?b{ ? qh ]?;??; w ?? {u ??omsm ?z mts? y ??x ?o?wpxk??d?{ ??o? ss ?t qua{^?z fw a ?w? ??? ?^u ? ??t`k?mx .t)?? t?bsf?wk?;+~ ?~3a ??;+z ;+z? |;zj?? m?z ? m?z ? ? ?sr?w]?;?? $`o ?-~ a ^?h?wpxk??d?{ g ? ; mt?; ^?h ?z mts? y ??x ?o?wpxk??d?{ g ? ; m?w?;?u |^??m xz ? 2t?? ?p] ?&m?b{ ???tgl^?os??b a ?s?|u [woj ??? 8t|?u?o t? pb? a ??hx u [? zb? ?z ?hx?t ?b? ?txz ?ot,nx?du ?apb{ ? a ?w]u |k?uqo]_m?b{ ?? ?`m?????sr];?`os??bwpz sedxi^m{ rohm customer support system http://www.rohm.co.jp/contact/ r1010 a |
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